Direct Current Characteristics of AlGaN/GaN...

ECS Journal of Solid State Science and Technology 2019 Vol. 8; Iss. 6

Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths

Lin, Wei-Chun, Zhong, Yi-Nan, Tsai, Ming-Yan, Ho, Wei-Cheng, Yu, Yi-Hsuan, Hsin, Yue-Ming
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Volume:
8
Year:
2019
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0291906jss
File:
PDF, 400 KB
english, 2019
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