Characterization of metal-ferroelectric-metal-insulator-semiconductor structures using ferroelectric Al doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses
Na, So-Yeong, Yoon, So-Jung, Kang, Seong-Youl, Moon, Seung-Eon, YOON, Sung-MinLanguage:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab2c62
Date:
June, 2019
File:
PDF, 865 KB
english, 2019