Specific Features of Closed-Mode Formation in Rectangular...

Semiconductors 2019 / 6 Vol. 53; Iss. 6

Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers

Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
53
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782619060162
Date:
June, 2019
File:
PDF, 489 KB
english, 2019
Conversion to is in progress
Conversion to is failed