An Enhanced Gate-Grounded NMOSFET for Robust ESD...

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IEEE Electron Device Letters 2019

An Enhanced Gate-Grounded NMOSFET for Robust ESD Applications

Du, Feibo, Song, Shiyu, Hou, Fei, Song, Wenqiang, Chen, Long, Liu, Jizhi, Liu, Zhiwei, Liou, Juin J.
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2926103
File:
PDF, 875 KB
english, 2019
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