Process-Induced Power-Performance Variability in Sub-5-nm III–V Tunnel FETs
Xiang, Yang, Verhulst, Anne S., Yakimets, Dmitry, Parvais, Bertrand, Mocuta, Anda, Groeseneken, GuidoVolume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2019.2909217
Date:
June, 2019
File:
PDF, 3.43 MB
english, 2019