Investigation of the Trap States and VTH Instability in...

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IEEE Transactions on Electron Devices 2019

Investigation of the Trap States and VTH Instability in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMTs with an In-Situ Si₃N₄ Interfacial Layer

Sun, Hui, Wang, Maojun, Yin, Ruiyuan, Chen, Jianguo, Xue, Shuai, Luo, Jiansheng, Hao, Yilong, Chen, Dongmin
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Year:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2919246
File:
PDF, 3.01 MB
english, 2019
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