A first-principles study of interfacial fluorination at the...

Journal of Applied Physics 2019 / 06 Vol. 125; Iss. 21

A first-principles study of interfacial fluorination at the HfO 2 /Al 2 O 3 interface in charge trapping memory devices

Lu, Wenjuan, Dong, Lanzhi, Ding, Cheng, Wang, Feifei, Dai, Yuehua
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Volume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5079290
Date:
June, 2019
File:
PDF, 3.06 MB
english, 2019
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