Negative Capacitance Tunneling Field Effect Transistors...

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Semiconductor Science and Technology 2019 / 06

Negative Capacitance Tunneling Field Effect Transistors Based on Monolayer Arsenene, Antimonene, and Bismuthene

Li, Hong, Xu, Peipei, Xu, Lin, Zhang, Zhiyong, Lu, Jing
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab2cd8
Date:
June, 2019
File:
PDF, 758 KB
english, 2019
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