High-voltage normally-off recessed tri-gate GaN power...

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IEEE Electron Device Letters 2019

High-voltage normally-off recessed tri-gate GaN power MOSFETs with low on-resistance

Zhu, Minghua, Ma, Jun, Nela, Luca, Erine, Catherine, Matioli, Elison
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2922204
File:
PDF, 1.10 MB
english, 2019
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