MoS 2 Doping Using Potassium...

IEEE Transactions on Electron Devices 2019 / 7 Vol. 66; Iss. 7

MoS 2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation

Hemanjaneyulu, Kuruva, Kumar, Jeevesh, Shrivastava, Mayank
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2916716
Date:
July, 2019
File:
PDF, 1.52 MB
english, 2019
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