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Solid-State Electronics 2019 / 7

Trap-Assisted Tunneling Current of Ultrathin InAlN/GaN HEMTs on Si (111) Substrate

Liang, Jingxian, Lai, Longkun, Zhou, Zhaokun, Zhang, Jing, Zhang, Jie, Xu, Jin, Zhang, Yipeng, Liu, Xinyu, Luo, Weijun
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.107622
Date:
July, 2019
File:
PDF, 1.98 MB
english, 2019
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