Study on Impact of Parasitic Capacitance on Performance of...

IEEE Transactions on Electron Devices 2019 / 7 Vol. 66; Iss. 7

Study on Impact of Parasitic Capacitance on Performance of Graded Channel Negative Capacitance SOI FET at High Temperature

Mehta, Hema, Kaur, Harsupreet
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2917775
Date:
July, 2019
File:
PDF, 3.38 MB
english, 2019
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