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[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - A Reliable Double-Sided 1200-V/600-A Multichip Half-bridge Insulated Gate Bipolar Transistor (IGBT) Module with High Power Density
Wang, Zheng, Mei, Yunhui, Liu, Wen, Xie, Yijing, Fu, Shancan, Li, Xin, Lu, Guo-QuanYear:
2018
Language:
english
DOI:
10.1109/WiPDAAsia.2018.8734637
File:
PDF, 322 KB
english, 2018