Comparative study on thermal robustness of GaN and...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers

Nozaki, Mikito, Terashima, Daiki, Yamada, Takahiro, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0ad2
Date:
June, 2019
File:
PDF, 2.03 MB
english, 2019
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