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[ACM Press the 7th International Conference - Hammamet, Tunisia (2018.12.26-2018.12.28)] Proceedings of the 7th International Conference on Software Engineering and New Technologies - ICSENT 2018 - Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications
Zerroumda, Badreddine, Djeffal, Faycal, Bentrcia, Toufik, Ferhati, HichemYear:
2018
Language:
english
DOI:
10.1145/3330089.3330470
File:
PDF, 310 KB
english, 2018