Inactivation of low-temperature-induced numerous defects at...

Microelectronic Engineering 2019 / 08 Vol. 216

Inactivation of low-temperature-induced numerous defects at the electrode/channel interfaces using ultrathin Al2O3 layers

Jung, Sung Hyeon, Ahn, Cheol Hyoun, Kim, Young Been, Kim, Dong Su, Deshpande, Nishad G., Cho, Hyung Koun
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Volume:
216
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111049
Date:
August, 2019
File:
PDF, 2.31 MB
english, 2019
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