Performance comparison of strained-SiGe and bulk-Si channel...

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Performance comparison of strained-SiGe and bulk-Si channel FinFETs at 7nm technology node

Dash, Taraprasanna, Dey, Suprava, Das, Sanghamitra, Jena, J R, Mohapatra, E, Maiti, C K
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Language:
english
Journal:
Journal of Micromechanics and Microengineering
DOI:
10.1088/1361-6439/ab31c8
Date:
July, 2019
File:
PDF, 531 KB
english, 2019
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