Interaction effect of suppressor concentration and current...

Microelectronic Engineering 2019 / 08 Vol. 216

Interaction effect of suppressor concentration and current density on the copper deposition rate in TSV filling process

Wang, Fuliang, Zhang, Qinglong, Liu, Wei, Wang, Yan, Zhu, Wenhui
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Volume:
216
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111022
Date:
August, 2019
File:
PDF, 2.18 MB
english, 2019
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