Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes
Hou, Xu, Chen, Xin, Jia, Xingyu, Liu, Yajin, Zhang, Yonghui, Zhang, Zi-Hui, Kuo, Hao-ChungLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900210
Date:
July, 2019
File:
PDF, 1.66 MB
english, 2019