Polarization Engineering to Manipulate the Breakdown...

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Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

Hou, Xu, Chen, Xin, Jia, Xingyu, Liu, Yajin, Zhang, Yonghui, Zhang, Zi-Hui, Kuo, Hao-Chung
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900210
Date:
July, 2019
File:
PDF, 1.66 MB
english, 2019
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