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Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Huang, Yong, Xu, Jing-Ping, Liu, Lu, Cheng, Zhi-Xiang, Lai, Pui-To, Tang, Wing-ManVolume:
493
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2019.07.055
Date:
November, 2019
File:
PDF, 1.42 MB
english, 2019