[IEEE 2019 31st International Symposium on Power...

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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Influence of External Gate Resistance on UIS Capability in Superjunction MOSFET

Honda, Masaaki, Yamaji, Mizue, Arai, Daisuke, Suzuki, Noriaki, Asada, Takeshi, Hirasawa, Wataru, Yamaguchi, Takeshi, Watanabe, Yuji
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Year:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757613
File:
PDF, 1.77 MB
english, 2019
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