The Interaction of Extended Defects as Origin of Step...

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The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III‐V Layers on Vicinal Si(001) Substrates

Niehle, Michael, Rodriguez, Jean-Baptiste, Cerutti, Laurent, Tournié, Eric, Trampert, Achim
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Language:
english
Journal:
physica status solidi (RRL) – Rapid Research Letters
DOI:
10.1002/pssr.201900290
Date:
July, 2019
File:
PDF, 513 KB
english, 2019
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