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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A Critical View of IGBT Buffer Designs for 200 °C Operation
Buitrago, Elizabeth, Mesemanolis, Athanasios, Andenna, Maxi, Papadopoulos, Charalampos, Corvasce, Chiara, Vobecky, Jan, Rahimo, MunafYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757638
File:
PDF, 887 KB
english, 2019