[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
Stockman, Arno, Canato, Eleonora, Meneghini, Matteo, Meneghesso, Gaudenzio, Moens, Peter, Bakeroot, BenoitYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757667
File:
PDF, 840 KB
english, 2019