Effect of photoelectrochemical etching and...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

Uemura, Keisuke, Deki, Manato, Honda, Yoshio, Amano, Hiroshi, Sato, Taketomo
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab06b9
Date:
June, 2019
File:
PDF, 1.03 MB
english, 2019
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