Improvement of emission efficiency with a sputtered AlN...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Improvement of emission efficiency with a sputtered AlN buffer layer in GaInN-based green light-emitting diodes

Ishimoto, Seiji, Han, Dong-Pyo, Yamamoto, Kengo, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab079f
Date:
June, 2019
File:
PDF, 1.13 MB
english, 2019
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