GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl 3 : investigation of the growth dependence on NH 3 and additional Cl 2
Takekawa, Nao, Takahashi, Machi, Kobayashi, Mayuko, Kanosue, Ichiro, Uno, Hiroyuki, Takemoto, Kikurou, Murakami, HisashiVolume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab09da
Date:
June, 2019
File:
PDF, 1.47 MB
english, 2019