Formation of low resistance contacts to p-type 4H-SiC using...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SD

Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Okamoto, Kento, Kikuchi, Toshifumi, Ikeda, Akihiro, Ikenoue, Hiroshi, Asano, Tanemasa
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab12c3
Date:
June, 2019
File:
PDF, 510 KB
english, 2019
Conversion to is in progress
Conversion to is failed