Development of a 2-inch GaN wafer by using the oxide vapor...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method

Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Nobuoka, Masaki, Kitamoto, Akira, Imanishi, Msayuki, Yoshimura, Masashi, Mori, Yusuke
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab12c8
Date:
June, 2019
File:
PDF, 880 KB
english, 2019
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