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Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits
Tarauni, Yusuf U., Thiruvadigal, D. John, Joseph, Bijo, Mohanbabu, A.Volume:
103
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.104624
Date:
November, 2019
File:
PDF, 1.95 MB
english, 2019