[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron

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