![](/img/cover-not-exists.png)
[IEEE 2019 International Conference on Electronics Packaging (ICEP) - Niigata, Japan (2019.4.17-2019.4.20)] 2019 International Conference on Electronics Packaging (ICEP) - Study of Gate Bias Voltage for Preventing Threshold Shift of SiC–MOSFET Body Diode during Transient Temperature Measurements
Kato, Fumiki, Sato, Shinji, Koui, Kenichi, Tanisawa, Hidekazu, Hozoji, Hiroshi, Yamaguchi, HiroshiYear:
2019
DOI:
10.23919/ICEP.2019.8733440
File:
PDF, 1.22 MB
2019