![](/img/cover-not-exists.png)
[IEEE 2019 International Conference on Electronics Packaging (ICEP) - Niigata, Japan (2019.4.17-2019.4.20)] 2019 International Conference on Electronics Packaging (ICEP) - High temperature dielectric property of silicon nitride insulating substrate for next generation power module up to 350 degrees Celsius.
Abe, Tsuyoshi, Nishigaki, Yasutaka, Kozako, Masahiro, Hikita, MasayukiYear:
2019
Language:
english
DOI:
10.23919/ICEP.2019.8733529
File:
PDF, 2.93 MB
english, 2019