Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB
Ichihara, Reika, Fujii, Shosuke, Yamaguchi, Marina, Yoshimura, Yoko, Mitani, Yuichiro, Saitoh, MasumiVolume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2904984
Date:
May, 2019
File:
PDF, 2.01 MB
english, 2019