Effect of defects properties on InP-based high electron...

Chinese Physics B 2019 / 07 Vol. 28; Iss. 7

Effect of defects properties on InP-based high electron mobility transistors

Sun, Shu-Xiang, Chang, Ming-Ming, Li, Meng-Ke, Ma, Liu-Hong, Zhong, Ying-Hui, Li, Yu-Xiao, Ding, Peng, Jin, Zhi, Wei, Zhi-Chao
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Volume:
28
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/28/7/078501
Date:
July, 2019
File:
PDF, 1.06 MB
english, 2019
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