Change of characteristics of n-GaN MOS capacitors with...

Microelectronic Engineering 2019 / 08 Vol. 216

Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing

Maeda, Erika, Nabatame, Toshihide, Yuge, Kazuya, Hirose, Masafumi, Inoue, Mari, Ohi, Akihiko, Ikeda, Naoki, Shiozaki, Koji, Kiyono, Hajime
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Volume:
216
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111036
Date:
August, 2019
File:
PDF, 981 KB
2019
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