Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN...

IEEE Transactions on Electron Devices 2019 / 7 Vol. 66; Iss. 7

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Malmros, Anna, Chen, Jr-Tai, Hjelmgren, Hans, Lu, Jun, Hultman, Lars, Kordina, Olof, Sveinbjornsson, Einar O., Zirath, Herbert, Rorsman, Niklas
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Volume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2914674
Date:
July, 2019
File:
PDF, 1.75 MB
2019
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