Theory and Experiment of Antiferroelectric (AFE) Si-Doped...

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IEEE Transactions on Electron Devices 2019

Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

Ali, T., Polakowski, P., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Zimmermann, K., Biedermann, K., Eng, L. M., Seidel, K., Muller, J.
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Year:
2019
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2921618
File:
PDF, 38 KB
2019
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