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An In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As Heterojunction Dopingless Tunnel FET With a Heterogate Dielectric for High Performance
Liu, Hu, Yang, Lin-An, Jin, Zhi, Hao, YueVolume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2916975
Date:
July, 2019
File:
PDF, 1.65 MB
2019