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Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons
Korolkov, O. M., Kozlovski, V. V., Lebedev, A. A., Sleptsuk, N., Toompuu, J., Rang, T.Volume:
53
Journal:
Semiconductors
DOI:
10.1134/S1063782619070133
Date:
July, 2019
File:
PDF, 324 KB
2019