[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method

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