Ultra-high hole mobility of Sn-catalyzed GaSb nanowires for...

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Nano Letters 2019 / 08

Ultra-high hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors

Sun, Jiamin, Peng, Meng, Zhang, Yushuang, Zhang, Lei, Peng, Rui, Miao, Chengcheng, Liu, Dong, Han, Mingming, Feng, Runfa, Ma, Yandong, Dai, Ying, He, Longbing, Shan, Chongxin, Pan, Anlian, Hu, Weida,
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Language:
english
Journal:
Nano Letters
DOI:
10.1021/acs.nanolett.9b01503
Date:
August, 2019
File:
PDF, 2.74 MB
english, 2019
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