Fast Switching -Ga2O3 Power MOSFET with a Trench-Gate...

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IEEE Electron Device Letters 2019

Fast Switching -Ga2O3 Power MOSFET with a Trench-Gate Structure

Dong, Hang, Long, Shibing, Sun, Haiding, Zhao, Xiaolong, He, Qiming, Qin, Yuan, Jian, Guangzhong, Zhou, Xuanze, Yu, Yangtong, Guo, Wei, Xiong, Wenhao, Hao, Weibing, Zhang, Ying, Xue, Huiwen, Xiang, Xu
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2926202
File:
PDF, 783 KB
english, 2019
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