Normally-off HEMTs with Regrown p-GaN Gate and Low-Pressure...

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IEEE Electron Device Letters 2019

Normally-off HEMTs with Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by using an AlN pre-layer

Zhong, Yaozong, Su, Shuai, Chen, Xin, Zhou, Yu, He, Junlei, Gao, Hongwei, Zhan, Xiaoning, Guo, Xiaolu, Liu, Jianxun, Sun, Qian, Yang, Hui
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2928027
File:
PDF, 688 KB
english, 2019
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