A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic...

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IEEE Electron Device Letters 2019

A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

Logoteta, Demetrio, Pala, Marco G., Choukroun, Jean, Dollfus, Philippe, Iannaccone, Giuseppe
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2928131
File:
PDF, 1.99 MB
english, 2019
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