Band gap renormalization in n-type GeSn alloys made by ion...

Journal of Applied Physics 2019 / 05 Vol. 125; Iss. 20

Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Prucnal, S., Berencén, Y., Wang, M., Rebohle, L., Kudrawiec, R., Polak, M., Zviagin, V., Schmidt-Grund, R., Grundmann, M., Grenzer, J., Turek, M., Droździel, A., Pyszniak, K., Zuk, J., Helm, M., Skoru
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Volume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5082889
Date:
May, 2019
File:
PDF, 2.03 MB
english, 2019
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