Electrically active deep levels formed by thermal oxidation...

Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC

Knoll, L., Kranz, L., Alfieri, G.
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Volume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5090261
Date:
May, 2019
File:
PDF, 1.03 MB
english, 2019
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