Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC
Knoll, L., Kranz, L., Alfieri, G.Volume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5090261
Date:
May, 2019
File:
PDF, 1.03 MB
english, 2019