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[IEEE 2019 Symposium on VLSI Technology - Kyoto, Japan (2019.6.9-2019.6.14)] 2019 Symposium on VLSI Technology - GaN HEMTs with Breakdown Voltage of 2200 V Realized on a 200 mm GaN-on-Insulator(GNOI)-on-Si Wafer
Liu, Zhihong, Xie, Hanlin, Lee, Kwang Hong, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A.Year:
2019
Language:
english
DOI:
10.23919/VLSIT.2019.8776522
File:
PDF, 1.03 MB
english, 2019