Gamma-ray irradiation-induced mobility enhancement of...

Japanese Journal of Applied Physics 2019 / 08 Vol. 58; Iss. 8

Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Muraoka, Kosuke, Sezaki, Hiroshi, Ishikawa, Seiji, Maeda, Tomonori, Makino, Takahiro, Takeyama, Akinori, Ohshima, Takeshi, Kuroki, Shin-Ichiro
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab2dab
Date:
August, 2019
File:
PDF, 1010 KB
english, 2019
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