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Quasi-3D TCAD modeling of STI radiation-induced leakage currents in SOI MOSFET structure
Petrosyants, K. O., Popov, D. A., Bykov, D. V.Volume:
1163
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1163/1/012040
Date:
February, 2019
File:
PDF, 808 KB
2019